Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 13 hours ago) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Surface Mount | YES |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2007 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Max Power Dissipation | 272mW |
Terminal Form | GULL WING |
Pin Count | 6 |
Reference Standard | AEC-Q101 |
Number of Elements | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 17 ns |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.5 Ω @ 10mA, 4V |
Vgs(th) (Max) @ Id | 1.5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 33pF @ 5V |
Gate Charge (Qg) (Max) @ Vgs | 1.3nC @ 5V |
Rise Time | 23ns |
Drain to Source Voltage (Vdss) | 30V |
Fall Time (Typ) | 82 ns |
Turn-Off Delay Time | 94 ns |
Continuous Drain Current (ID) | 250mA |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.25A |
Drain-source On Resistance-Max | 2.5Ohm |
DS Breakdown Voltage-Min | 30V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Standard |
Feedback Cap-Max (Crss) | 12 pF |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |