Parameters | |
---|---|
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation | 100mW |
Output Current | 50mA |
Forward Current | 50mA |
Forward Voltage | 1.8V |
Collector Emitter Voltage (VCEO) | 30V |
Max Collector Current | 50mA |
Sensing Distance | 3 (76.2mm) |
Collector Emitter Breakdown Voltage | 30V |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Current - Collector (Ic) (Max) | 50mA |
Reverse Breakdown Voltage | 3V |
Reverse Voltage | 3V |
Wavelength | 850 nm |
Sensing Method | Reflective |
Max Breakdown Voltage | 30V |
Current - DC Forward (If) (Max) | 50mA |
Input Current | 50mA |
Peak Wavelength | 850 nm |
Reverse Voltage (DC) | 3V |
Height | 12.7mm |
Length | 12.19mm |
Width | 5.08mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | PCB, Through Hole |
Mounting Type | Through Hole |
Package / Case | PCB Mount |
Number of Pins | 4 |
Operating Temperature | -40°C~85°C |
Packaging | Bulk |
Published | 2006 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Termination | Solder |
Max Operating Temperature | 85°C |
Min Operating Temperature | -40°C |
Output Type | Phototransistor |
Operating Supply Voltage | 1.8V |