OPB810W55Z
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | Module, Pre-Wired |
| Number of Pins | 4 |
| Operating Temperature | -40°C~80°C |
| Packaging | Bulk |
| Published | 2008 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Type | Unamplified |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Output Voltage | 30V |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Power Dissipation | 100mW |
| Forward Current | 50mA |
| Forward Voltage | 1.7V |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 30mA |
| Sensing Distance | 0.375 (9.53mm) |
| Collector Emitter Breakdown Voltage | 30V |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Current - Collector (Ic) (Max) | 30mA |
| Reverse Breakdown Voltage | 2V |
| Wavelength | 890 nm |
| Sensing Method | Through-Beam |
| Max Breakdown Voltage | 30V |
| Current - DC Forward (If) (Max) | 50mA |
| Input Current | 20mA |
| Touchscreen | Infrared (IR) |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
