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PD85035TR-E

TRANS RF N-CH FET POWERSO-10RF


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-PD85035TR-E
  • Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Datasheet: PDF
  • Stock: 545
  • Description: TRANS RF N-CH FET POWERSO-10RF (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 150°C
Subcategory FET General Purpose Power
Max Power Dissipation 95W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 8A
Frequency 870MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PD85035
Pin Count 10
JESD-30 Code R-PDSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 95W
Case Connection SOURCE
Current - Test 350mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 15V
Gain 17dB
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 40V
Power - Output 15W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 13.6V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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