PDTC115ET,215
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| Max Power Dissipation | 250mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | PDTC115 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Transistor Type | NPN - Pre-Biased |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 20mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 5V |
| Current - Collector Cutoff (Max) | 1μA |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250μA, 5mA |
| Collector Emitter Breakdown Voltage | 50V |
| Max Breakdown Voltage | 50V |
| hFE Min | 80 |
| Resistor - Base (R1) | 100 k Ω |
| Resistor - Emitter Base (R2) | 100 k Ω |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
