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PDTC123JU,115

PDTC123J series - NPN resistor-equipped transistors; R1 = 2.2 kO, R2 = 47 kO


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PDTC123JU,115
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 651
  • Description: PDTC123J series - NPN resistor-equipped transistors; R1 = 2.2 kO, R2 = 47 kO (Kg)

Details

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Parameters
Max Breakdown Voltage 50V
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 4.535924g
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 21
HTS Code 8541.21.00.95
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number PDTC123
Pin Count 3
Max Output Current 100mA
Operating Supply Voltage 50V
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 10V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 230MHz
See Relate Datesheet

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