PSMN013-30MLC,115
| Parameters | |
|---|---|
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 13.6m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 1.95V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 519pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 39A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| Rise Time | 9.8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 5.5 ns |
| Turn-Off Delay Time | 9.6 ns |
| Continuous Drain Current (ID) | 39A |
| Factory Lead Time | 1 Week |
| Gate to Source Voltage (Vgs) | 1.95V |
| Max Dual Supply Voltage | 30V |
| Mounting Type | Surface Mount |
| Drain-source On Resistance-Max | 0.0169Ohm |
| Package / Case | SOT-1210, 8-LFPAK33 |
| Surface Mount | YES |
| Drain to Source Breakdown Voltage | 27V |
| Number of Pins | 8 |
| Pulsed Drain Current-Max (IDM) | 157A |
| Transistor Element Material | SILICON |
| Avalanche Energy Rating (Eas) | 5.6 mJ |
| Operating Temperature | -55°C~175°C TJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Pin Count | 8 |
| Reference Standard | IEC-60134 |
| JESD-30 Code | R-PSSO-G4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 38W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 38W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7 ns |
See Relate Datesheet
