banner_page

QSB363YR

Phototransistor IR Chip Silicon 940nm 2-Pin T-3/4 T/R


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-QSB363YR
  • Package: 2-SMD, Yoke Bend
  • Datasheet: PDF
  • Stock: 197
  • Description: Phototransistor IR Chip Silicon 940nm 2-Pin T-3/4 T/R (Kg)

Details

Tags

Parameters
Power Dissipation 75mW
Viewing Angle 24°
Optoelectronic Device Type PHOTO TRANSISTOR
Lens Style Domed
Rise Time 15μs
Fall Time (Typ) 15 μs
Collector Emitter Voltage (VCEO) 5V
Max Collector Current 2mA
Collector Emitter Breakdown Voltage 30V
Lens Color Black, Clear
Wavelength 940nm
Max Breakdown Voltage 30V
Dark Current 100nA
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 2-SMD, Yoke Bend
Infrared Range YES
Number of Pins 2
Weight 90mg
Light Current-Nom 1.5mA
Shape ROUND
Operating Temperature -40°C~85°C TA
Radiation Hardening No
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Lead Free Lead Free
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature DAY LIGHT FILTER
Subcategory Photo Transistors
Max Power Dissipation 75mW
Orientation Top View
Number of Functions 1
Operating Supply Voltage 5V
Number of Elements 1
Polarity NPN
Configuration SINGLE
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good