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RN2506(TE85L,F)

Bipolar Transistors - Pre-Biased BRT PNP 2-in-1 Ic -100mA -50V VCEO


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-RN2506(TE85L,F)
  • Package: SC-74A, SOT-753
  • Datasheet: -
  • Stock: 126
  • Description: Bipolar Transistors - Pre-Biased BRT PNP 2-in-1 Ic -100mA -50V VCEO (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 300mW
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power - Max 300mW
Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) -5V
hFE Min 80
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
See Relate Datesheet

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