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RN2906FE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ES6


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-RN2906FE(TE85L,F)
  • Package: SOT-563, SOT-666
  • Datasheet: -
  • Stock: 794
  • Description: TRANS 2PNP PREBIAS 0.1W ES6 (Kg)

Details

Tags

Parameters
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 100mW
Reach Compliance Code unknown
Number of Elements 2
Power - Max 100mW
Polarity/Channel Type PNP
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 4.7k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON
See Relate Datesheet

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