banner_page

RN2906,LF

Trans GP BJT PNP 50V 0.1A 6-Pin US Embossed T/R


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-RN2906,LF
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: -
  • Stock: 955
  • Description: Trans GP BJT PNP 50V 0.1A 6-Pin US Embossed T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Supplier Device Package US6
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 200mW
Polarity PNP
Power - Max 200mW
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
hFE Min 80
Resistor - Base (R1) 4.7kOhms
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47kOhms
Height 900μm
Length 2mm
Width 1.25mm
RoHS Status RoHS Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good