Parameters | |
---|---|
Subcategory | Photo Transistors |
Max Power Dissipation | 150mW |
Orientation | Top View |
Number of Functions | 1 |
Polarity | NPN |
Configuration | SINGLE |
Power Dissipation | 150mW |
Viewing Angle | 72° |
Output Power | 150mW |
Optoelectronic Device Type | PHOTO TRANSISTOR |
Lens Style | Domed |
Size | 3.1mm |
Rise Time | 10μs |
Fall Time (Typ) | 10 μs |
Collector Emitter Voltage (VCEO) | 32V |
Max Collector Current | 30mA |
Wavelength - Peak | 800 nm |
Collector Emitter Breakdown Voltage | 32V |
On-State Current-Max | 0.03A |
Dark Current | 500nA |
Infrared Range | YES |
Light Current-Nom | 2mA |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | Radial |
Shape | ROUND |
Operating Temperature | -25°C~85°C TA |
Packaging | Bulk |
Published | 2002 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | HIGH SENSITIVITY |