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RQ6P015SPTR

MOSFET P-CH 100V 1.5A TSMT


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-RQ6P015SPTR
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 375
  • Description: MOSFET P-CH 100V 1.5A TSMT (Kg)

Details

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Parameters
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 600mW Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 470m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.5A Ta
Gate Charge (Qg) (Max) @ Vgs 322nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Factory Lead Time 1 Week
Vgs (Max) ±20V
Mount Surface Mount
Continuous Drain Current (ID) 1.5A
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Threshold Voltage -2.5V
Number of Pins 6
DS Breakdown Voltage-Min 100V
Transistor Element Material SILICON
REACH SVHC No SVHC
Operating Temperature 150°C TJ
RoHS Status ROHS3 Compliant
Packaging Cut Tape (CT)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 350mOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
See Relate Datesheet

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