Parameters | |
---|---|
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 600mW Ta |
Operating Mode | ENHANCEMENT MODE |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 470m Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 1.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 322nC @ 10V |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Factory Lead Time | 1 Week |
Vgs (Max) | ±20V |
Mount | Surface Mount |
Continuous Drain Current (ID) | 1.5A |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Threshold Voltage | -2.5V |
Number of Pins | 6 |
DS Breakdown Voltage-Min | 100V |
Transistor Element Material | SILICON |
REACH SVHC | No SVHC |
Operating Temperature | 150°C TJ |
RoHS Status | ROHS3 Compliant |
Packaging | Cut Tape (CT) |
Published | 2014 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Resistance | 350mOhm |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |