Parameters | |
---|---|
Power Dissipation-Max | 1W Ta 20W Tc |
Element Configuration | Single |
Power Dissipation | 1W |
Turn On Delay Time | 7.4 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 4.9 Ω @ 1A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 2A Ta |
Gate Charge (Qg) (Max) @ Vgs | 8.7nC @ 10V |
Rise Time | 8.8ns |
Drain to Source Voltage (Vdss) | 500V |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 27 ns |
Turn-Off Delay Time | 42 ns |
Continuous Drain Current (ID) | 2A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 2A |
Height | 2.3mm |
Length | 6.5mm |
Width | 5.5mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Number of Pins | 3 |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Pin Count | 3 |
Number of Elements | 1 |