SI1967DH-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Weight | 28.009329mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 490MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.25W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | SI1967 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 740mW |
| Turn On Delay Time | 2 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 490m Ω @ 910mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 8V |
| Rise Time | 27ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | -1A |
| Threshold Voltage | -1V |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 1A |
| Drain to Source Breakdown Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Height | 1.1mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
