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SI4465ADY-T1-E3

MOSFET P-CH 8V 8SOIC


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI4465ADY-T1-E3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 131
  • Description: MOSFET P-CH 8V 8SOIC (Kg)

Details

Tags

Parameters
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 9mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Power Dissipation-Max 3W Ta 6.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Turn On Delay Time 33 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 14A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 85nC @ 4.5V
Rise Time 170ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 112 ns
Turn-Off Delay Time 168 ns
Continuous Drain Current (ID) -13.7A
Threshold Voltage -450mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 20A
DS Breakdown Voltage-Min 8V
Height 1.5mm
See Relate Datesheet

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