SI7997DP-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Number of Pins | 8 |
| Weight | 506.605978mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 5.5mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 46W |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | SI7997 |
| Pin Count | 8 |
| JESD-30 Code | R-XDSO-C5 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 5.5m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 6200pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 60A |
| Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 40 ns |
| Turn-Off Delay Time | 115 ns |
| Continuous Drain Current (ID) | -20.8A |
| Threshold Voltage | -2.2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 60A |
| Drain to Source Breakdown Voltage | -30V |
| Pulsed Drain Current-Max (IDM) | 100A |
| Avalanche Energy Rating (Eas) | 45 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Standard |
| Height | 1.12mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
