Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | 12-SIP |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Published | 2001 |
JESD-609 Code | e0 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 12 |
ECCN Code | EAR99 |
Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 0.075 |
HTS Code | 8541.29.00.95 |
Subcategory | BIP General Purpose Power |
Max Power Dissipation | 20W |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 12 |
JESD-30 Code | R-PSIP-T12 |
Qualification Status | Not Qualified |
Number of Elements | 4 |
Configuration | 4 BANKS, DARLINGTON WITH BUILT-IN RESISTOR |
Power - Max | 4W 20W |
Polarity/Channel Type | PNP |
Transistor Type | 4 PNP Darlington (Quad) |
Collector Emitter Voltage (VCEO) | 1.5V |
Max Collector Current | 4A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 3A 4V |
Current - Collector Cutoff (Max) | 10μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 6mA, 3A |
Collector Emitter Breakdown Voltage | 60V |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |