banner_page

SQ4431EY-T1_GE3

Automotive P-Channel 30 V (D-S) 175 °C MOSFET


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SQ4431EY-T1_GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 560
  • Description: Automotive P-Channel 30 V (D-S) 175 °C MOSFET (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 506.605978mg
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 6W Tc
Element Configuration Single
Power Dissipation 6W
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1265pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10.8A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 10.8A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Input Capacitance 1.265nF
Drain to Source Resistance 30mOhm
Rds On Max 30 mΩ
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good