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STGW60H65DFB

IGBT 650V 80A 375W TO-247


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGW60H65DFB
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 378
  • Description: IGBT 650V 80A 375W TO-247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 375W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGW60
Element Configuration Single
Input Type Standard
Power - Max 375W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Reverse Recovery Time 60 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A
IGBT Type Trench Field Stop
Gate Charge 306nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 51ns/160ns
Switching Energy 1.09mJ (on), 626μJ (off)
Gate-Emitter Voltage-Max 20V
Height 20.15mm
Length 15.75mm
Width 5.15mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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