STQ1NK80ZR-AP
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount, Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Series | SuperMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 16Ohm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Base Part Number | STQ1 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3W |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 16 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 300mA Tc |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 10V |
| Rise Time | 30ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 55 ns |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | 300mA |
| Threshold Voltage | 3.75V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 800V |
| Pulsed Drain Current-Max (IDM) | 5A |
| Avalanche Energy Rating (Eas) | 50 mJ |
| Nominal Vgs | 3.75 V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
