Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 6.000006g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2008 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.7W Ta 59.5W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.7W |
Turn On Delay Time | 8 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5.1m Ω @ 22A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2780pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 50A Tc |
Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
Rise Time | 9ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 9 ns |
Turn-Off Delay Time | 35 ns |
Continuous Drain Current (ID) | 50A |
Threshold Voltage | 1V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Avalanche Energy Rating (Eas) | 80 mJ |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |