Parameters | |
---|---|
Transistor Element Material | SILICON |
Packaging | Bulk |
Published | 2010 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
HTS Code | 8541.29.00.95 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 2W |
Pin Count | 3 |
Operating Temperature (Max) | 150°C |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | ISOLATED |
Input Type | Standard |
Power - Max | 2W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2V |
Max Collector Current | 27A |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 300 ns |
Test Condition | 300V, 15A, 30 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 15A |
Turn Off Time-Nom (toff) | 450 ns |
IGBT Type | NPT |
Gate Charge | 95nC |
Current - Collector Pulsed (Icm) | 108A |
Td (on/off) @ 25°C | 65ns/250ns |
Gate-Emitter Thr Voltage-Max | 6V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |