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V20120C-E3/4W

V20120C-E3/4W datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available at Feilidi


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Nocochips NO: 884-V20120C-E3/4W
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 548
  • Description: V20120C-E3/4W datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available at Feilidi (Kg)

Details

Tags

Parameters
Average Rectified Current 10A
Number of Phases 1
Reverse Recovery Time 20 ns
Peak Reverse Current 700μA
Max Repetitive Reverse Voltage (Vrrm) 120V
Peak Non-Repetitive Surge Current 120A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 175A
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 2
Diode Element Material SILICON
Packaging Tube
Published 2011
Series TMBS®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 700μA @ 120V
Voltage - Forward (Vf) (Max) @ If 900mV @ 10A
Forward Current 20A
Max Reverse Leakage Current 150μA
Operating Temperature - Junction -40°C~150°C
Max Surge Current 110A
Application EFFICIENCY
Forward Voltage 900mV
Max Reverse Voltage (DC) 120V
See Relate Datesheet

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