VMMK-1218-BLKG
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Package / Case | 0402 (1005 Metric) |
| Number of Pins | 3 |
| Transistor Element Material | GALLIUM ARSENIDE |
| Packaging | Strip |
| Published | 2008 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 150°C |
| Subcategory | FET RF Small Signal |
| Max Power Dissipation | 300mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 100mA |
| Frequency | 10GHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300mW |
| Case Connection | SOURCE |
| Current - Test | 20mA |
| Transistor Application | AMPLIFIER |
| Drain to Source Voltage (Vdss) | 5V |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | E-pHEMT |
| Continuous Drain Current (ID) | 100mA |
| Gate to Source Voltage (Vgs) | 1V |
| Gain | 9dB |
| Drain Current-Max (Abs) (ID) | 0.1A |
| DS Breakdown Voltage-Min | 5V |
| Power - Output | 12dBm |
| FET Technology | HIGH ELECTRON MOBILITY |
| Noise Figure | 0.81dB |
| Voltage - Test | 3V |
| Height | 250μm |
| Length | 1mm |
| Width | 500μm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
