Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-2 |
Number of Pins | 3 |
Diode Element Material | SILICON |
Packaging | Tube |
Published | 2006 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Max Operating Temperature | 150°C |
Min Operating Temperature | -40°C |
HTS Code | 8541.10.00.80 |
JESD-30 Code | R-PSFM-T2 |
Number of Elements | 1 |
Element Configuration | Single |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Diode Type | Standard |
Current - Reverse Leakage @ Vr | 100μA @ 800V |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 40A |
Case Connection | CATHODE |
Forward Current | 40A |
Operating Temperature - Junction | -40°C~150°C |
Max Surge Current | 475A |
Application | HIGH VOLTAGE |
Forward Voltage | 1.1V |
Max Reverse Voltage (DC) | 800V |
Average Rectified Current | 40A |
Number of Phases | 1 |
Peak Reverse Current | 100μA |
Max Repetitive Reverse Voltage (Vrrm) | 800V |
Peak Non-Repetitive Surge Current | 475A |
Reverse Voltage | 800V |
Max Forward Surge Current (Ifsm) | 475A |
Natural Thermal Resistance | 0.2 °C/W |
Height | 20.7mm |
Length | 15.9mm |
Width | 5.3mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |