Parameters | |
---|---|
Max Power Dissipation | 2.119kW |
Number of Elements | 1 |
Configuration | Half Bridge |
Power - Max | 2119W |
Input | Standard |
Collector Emitter Voltage (VCEO) | 2.15V |
Max Collector Current | 600A |
Current - Collector Cutoff (Max) | 5mA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Input Capacitance | 28.8nF |
Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 400A |
IGBT Type | Trench |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 28.8nF @ 25V |
RoHS Status | ROHS3 Compliant |
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Double INT-A-PAK (3 + 8) |
Operating Temperature | 150°C TJ |
Published | 2015 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | NICKEL (197) |
Subcategory | Insulated Gate BIP Transistors |