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VS-GT400TH120N

Trans IGBT Module N-CH 1.2KV 600A


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Nocochips NO: 884-VS-GT400TH120N
  • Package: Double INT-A-PAK (3 + 8)
  • Datasheet: PDF
  • Stock: 990
  • Description: Trans IGBT Module N-CH 1.2KV 600A (Kg)

Details

Tags

Parameters
Max Power Dissipation 2.119kW
Number of Elements 1
Configuration Half Bridge
Power - Max 2119W
Input Standard
Collector Emitter Voltage (VCEO) 2.15V
Max Collector Current 600A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 28.8nF
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 400A
IGBT Type Trench
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 28.8nF @ 25V
RoHS Status ROHS3 Compliant
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 8)
Operating Temperature 150°C TJ
Published 2015
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish NICKEL (197)
Subcategory Insulated Gate BIP Transistors
See Relate Datesheet

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