Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | E-Line-3, Formed Leads |
Number of Pins | 3 |
Weight | 453.59237mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~200°C TJ |
Packaging | Tape & Box (TB) |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Subcategory | Other Transistors |
Voltage - Rated DC | 25V |
Max Power Dissipation | 1W |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 4A |
Frequency | 180MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 180MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 25V |
Max Collector Current | 4A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1A 2V |
Current - Collector Cutoff (Max) | 10nA |
Vce Saturation (Max) @ Ib, Ic | 220mV @ 50mA, 4A |
Collector Emitter Breakdown Voltage | 25V |
Transition Frequency | 180MHz |
Collector Emitter Saturation Voltage | 220mV |
Max Breakdown Voltage | 25V |
Collector Base Voltage (VCBO) | 80V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 300 |
Continuous Collector Current | 4A |
Height | 4.01mm |
Length | 4.77mm |
Width | 2.41mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |