Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Number of Pins | 3 |
Weight | 130.492855mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Resistance | 11Ohm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -240V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | -200mA |
Pin Count | 4 |
JESD-30 Code | R-PDSO-G4 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.5W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.6W |
Case Connection | DRAIN |
Turn On Delay Time | 8 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 9 Ω @ 200mA, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 200mA Ta |
Rise Time | 8ns |
Drain to Source Voltage (Vdss) | 240V |
Drive Voltage (Max Rds On,Min Rds On) | 3.5V 10V |
Vgs (Max) | ±40V |
Fall Time (Typ) | 20 ns |
Turn-Off Delay Time | 26 ns |
Continuous Drain Current (ID) | 200mA |
Gate to Source Voltage (Vgs) | 40V |
Drain Current-Max (Abs) (ID) | 0.2A |
Drain to Source Breakdown Voltage | -240V |
Pulsed Drain Current-Max (IDM) | 1A |
Height | 1.6mm |
Length | 4.6mm |
Width | 2.6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |