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ZXMHC10A07T8TA

MOSFET 2N/2P-CH 100V 1A/0.8A SM8


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZXMHC10A07T8TA
  • Package: 8-SMD, Gull Wing
  • Datasheet: PDF
  • Stock: 374
  • Description: MOSFET 2N/2P-CH 100V 1A/0.8A SM8 (Kg)

Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 700m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 138pF @ 60V
Current - Continuous Drain (Id) @ 25°C 1A 800mA
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 10V
Rise Time 2.1ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 3.3 ns
Turn-Off Delay Time 5.9 ns
Continuous Drain Current (ID) 1.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1A
Drain to Source Breakdown Voltage 100V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Height 1.6mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Gull Wing
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 1Ohm
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 1.3W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Current Rating 1.4A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXMHC10A07T8
Pin Count 8
Number of Elements 4
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 1.6 ns
FET Type 2 N and 2 P-Channel (H-Bridge)
Transistor Application SWITCHING
See Relate Datesheet

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