Parameters | |
---|---|
Rds On (Max) @ Id, Vgs | 700m Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 138pF @ 60V |
Current - Continuous Drain (Id) @ 25°C | 1A 800mA |
Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 10V |
Rise Time | 2.1ns |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Fall Time (Typ) | 3.3 ns |
Turn-Off Delay Time | 5.9 ns |
Continuous Drain Current (ID) | 1.1A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 1A |
Drain to Source Breakdown Voltage | 100V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Standard |
Height | 1.6mm |
Length | 6.7mm |
Width | 3.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Gull Wing |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Resistance | 1Ohm |
Terminal Finish | Matte Tin (Sn) |
Max Power Dissipation | 1.3W |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 1.4A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | ZXMHC10A07T8 |
Pin Count | 8 |
Number of Elements | 4 |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.3W |
Turn On Delay Time | 1.6 ns |
FET Type | 2 N and 2 P-Channel (H-Bridge) |
Transistor Application | SWITCHING |