Parameters | |
---|---|
Mount | Chassis Mount, Surface Mount |
Mounting Type | Chassis Mount |
Package / Case | 55FW-1 |
Transistor Element Material | SILICON |
Operating Temperature | 200°C TJ |
Packaging | Bulk |
Published | 2017 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | TIN LEAD |
Subcategory | BIP RF Small Signal |
Max Power Dissipation | 250W |
Terminal Position | RADIAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
JESD-30 Code | O-XRDB-F4 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Power - Max | 250W |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 65V |
Max Collector Current | 6.5A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA 5V |
Collector Emitter Breakdown Voltage | 65V |
Gain | 7.6dB ~ 8.5dB |
Frequency - Transition | 1.025GHz~1.15GHz |
Highest Frequency Band | L B |
Collector-Base Capacitance-Max | 50pF |
RoHS Status | RoHS Compliant |