Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Chassis Mount, Surface Mount |
Mounting Type | Chassis Mount |
Package / Case | 55FW-1 |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | 200°C TJ |
Packaging | Bulk |
Published | 2009 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Max Power Dissipation | 250W |
Terminal Position | RADIAL |
Terminal Form | FLAT |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | SINGLE |
Power Dissipation | 250W |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 65V |
Max Collector Current | 6.5A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 500mA 5V |
Collector Emitter Breakdown Voltage | 65V |
Gain | 8.08dB ~ 8.5dB |
Frequency - Transition | 1.025GHz~1.15GHz |
Emitter Base Voltage (VEBO) | 3.5V |
Highest Frequency Band | L B |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |