1N3070
| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial |
| Number of Pins | 2 |
| Weight | 80g |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Published | 2016 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Capacitance | 5pF |
| Subcategory | Rectifier Diodes |
| Voltage - Rated DC | 200V |
| Terminal Form | WIRE |
| Reach Compliance Code | unknown |
| Current Rating | 500mA |
| Base Part Number | 1N3070 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 100nA @ 175V |
| Power Dissipation | 500mW |
| Output Current | 500mA |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 100mA |
| Case Connection | ISOLATED |
| Forward Current | 500mA |
| Operating Temperature - Junction | 175°C Max |
| Max Surge Current | 4A |
| Forward Voltage | 1V |
| Max Reverse Voltage (DC) | 200V |
| Average Rectified Current | 500mA |
| Reverse Recovery Time | 50 ns |
| Peak Reverse Current | 100nA |
| Max Repetitive Reverse Voltage (Vrrm) | 200V |
| Capacitance @ Vr, F | 5pF @ 0V 1MHz |
| Peak Non-Repetitive Surge Current | 4A |
| Reverse Voltage | 200V |
| Recovery Time | 50 ns |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
