1N4150W-E3-08
| Parameters | |
|---|---|
| Pin Count | 2 |
| JESD-30 Code | R-PDSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 100nA @ 50V |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 200mA |
| Forward Current | 200mA |
| Max Reverse Leakage Current | 100nA |
| Operating Temperature - Junction | 150°C Max |
| Output Current-Max | 0.2A |
| Max Reverse Voltage (DC) | 50V |
| Average Rectified Current | 200mA |
| Reverse Recovery Time | 4 ns |
| Max Repetitive Reverse Voltage (Vrrm) | 50V |
| Capacitance @ Vr, F | 2.5pF @ 0V 1MHz |
| Recovery Time | 4 ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOD-123 |
| Weight | 10.290877mg |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.70 |
| Max Power Dissipation | 410mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | 1N4150W |
See Relate Datesheet
