Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Silver, Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | DO-204AH, DO-35, Axial |
Diode Element Material | SILICON |
Packaging | Tape & Box (TB) |
Published | 2013 |
JESD-609 Code | e2 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver (Sn/Ag) |
Max Operating Temperature | 175°C |
Min Operating Temperature | -65°C |
HTS Code | 8541.10.00.70 |
Subcategory | Rectifier Diodes |
Max Power Dissipation | 500mW |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 300mA |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | O-XALF-W2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Speed | Small Signal =< 200mA (Io), Any Speed |
Diode Type | Standard |
Current - Reverse Leakage @ Vr | 100nA @ 25V |
Voltage - Forward (Vf) (Max) @ If | 1V @ 30mA |
Case Connection | ISOLATED |
Forward Current | 300mA |
Max Reverse Leakage Current | 100nA |
Operating Temperature - Junction | -65°C~175°C |
Max Surge Current | 2A |
Output Current-Max | 0.15A |
Forward Voltage | 1V |
Max Reverse Voltage (DC) | 25V |
Average Rectified Current | 150mA |
Reverse Recovery Time | 4 ns |
Max Repetitive Reverse Voltage (Vrrm) | 35V |
Capacitance @ Vr, F | 4pF @ 0V 1MHz |
Peak Non-Repetitive Surge Current | 2A |
Recovery Time | 4 ns |
RoHS Status | ROHS3 Compliant |