1N5059TR
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | SOD-57, Axial |
| Surface Mount | NO |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e2 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver (Sn96.5Ag3.5) |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Form | WIRE |
| Base Part Number | 1N5059 |
| JESD-30 Code | E-LALF-W2 |
| Operating Temperature (Max) | 175°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Avalanche |
| Current - Reverse Leakage @ Vr | 1μA @ 200V |
| Voltage - Forward (Vf) (Max) @ If | 1.15V @ 2.5A |
| Case Connection | ISOLATED |
| Operating Temperature - Junction | -55°C~175°C |
| Output Current-Max | 2A |
| Application | GENERAL PURPOSE |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 2A |
| Number of Phases | 1 |
| Reverse Recovery Time | 4μs |
| Rep Pk Reverse Voltage-Max | 200V |
| Capacitance @ Vr, F | 40pF @ 0V 1MHz |
| Non-rep Pk Forward Current-Max | 50A |
| Reverse Current-Max | 1μA |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
