1N5407GP-TP
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | DO-201AD, Axial |
| Surface Mount | NO |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 1996 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | LOW LEAKAGE CURRENT |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Technology | SCHOTTKY |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 2 |
| JESD-30 Code | O-PALF-W2 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 5μA @ 800V |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 3A |
| Case Connection | ISOLATED |
| Operating Temperature - Junction | -55°C~150°C |
| Output Current-Max | 3A |
| Application | GENERAL PURPOSE |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Current - Average Rectified (Io) | 3A |
| Number of Phases | 1 |
| Rep Pk Reverse Voltage-Max | 800V |
| Capacitance @ Vr, F | 40pF @ 4V 1MHz |
| Non-rep Pk Forward Current-Max | 200A |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
