1N5619
| Parameters | |
|---|---|
| Output Current-Max | 1A |
| Reverse Recovery Time | 250 ns |
| Peak Reverse Current | 500nA |
| Max Repetitive Reverse Voltage (Vrrm) | 600V |
| JEDEC-95 Code | DO-7 |
| Capacitance @ Vr, F | 27pF @ 5V 1MHz |
| Peak Non-Repetitive Surge Current | 25A |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | Axial |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Form | WIRE |
| Pin Count | 2 |
| JESD-30 Code | E-XALF-W2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 500nA @ 600V |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 1A |
| Case Connection | ISOLATED |
| Forward Current | 2A |
| Operating Temperature - Junction | -65°C~175°C |
See Relate Datesheet
