Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | SOD-64, Axial |
Number of Pins | 2 |
Diode Element Material | SILICON |
Packaging | Tape & Box (TB) |
Published | 2013 |
JESD-609 Code | e2 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Additional Feature | METALLURGICALLY BONDED |
HTS Code | 8541.10.00.80 |
Capacitance | 40pF |
Subcategory | Rectifier Diodes |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 2 |
Number of Elements | 1 |
Element Configuration | Single |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Diode Type | Avalanche |
Current - Reverse Leakage @ Vr | 1μA @ 200V |
Voltage - Forward (Vf) (Max) @ If | 1V @ 3A |
Case Connection | ISOLATED |
Forward Current | 3A |
Operating Temperature - Junction | -55°C~175°C |
Max Surge Current | 100A |
Output Current-Max | 3A |
Application | GENERAL PURPOSE |
Forward Voltage | 1V |
Max Reverse Voltage (DC) | 600V |
Average Rectified Current | 3A |
Number of Phases | 1 |
Reverse Recovery Time | 7.5 μs |
Peak Reverse Current | 1μA |
Max Repetitive Reverse Voltage (Vrrm) | 600V |
Capacitance @ Vr, F | 60pF @ 4V 1MHz |
Peak Non-Repetitive Surge Current | 100A |
Reverse Voltage | 600V |
Recovery Time | 6 μs |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |