Parameters | |
---|---|
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | DO-201AD, Axial |
Number of Pins | 2 |
Diode Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | SUPERECTIFIER® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Max Operating Temperature | 175°C |
Min Operating Temperature | -65°C |
Additional Feature | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
HTS Code | 8541.10.00.80 |
Subcategory | Rectifier Diodes |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | 250 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | 1N5627 |
Pin Count | 2 |
Number of Elements | 1 |
Element Configuration | Single |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Diode Type | Standard |
Current - Reverse Leakage @ Vr | 5μA @ 800V |
Voltage - Forward (Vf) (Max) @ If | 1V @ 3A |
Case Connection | ISOLATED |
Forward Current | 3A |
Operating Temperature - Junction | -65°C~175°C |
Max Surge Current | 125A |
Output Current-Max | 3A |
Application | GENERAL PURPOSE |
Forward Voltage | 950mV |
Max Reverse Voltage (DC) | 800V |
Average Rectified Current | 3A |
Number of Phases | 1 |
Reverse Recovery Time | 3 μs |
Peak Reverse Current | 5μA |
Max Repetitive Reverse Voltage (Vrrm) | 800V |
Capacitance @ Vr, F | 40pF @ 4V 1MHz |
Peak Non-Repetitive Surge Current | 125A |
Reverse Voltage | 800V |
Max Forward Surge Current (Ifsm) | 125A |
Recovery Time | 3 μs |
Diameter | 4.3mm |
Length | 3.9878mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |