1N5767
| Parameters | |
|---|---|
| Package / Case | DO-204AH, DO-35, Axial |
| Surface Mount | NO |
| Diode Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | LOW HARMONIC DISTORTION |
| HTS Code | 8541.10.00.70 |
| Subcategory | PIN Diodes |
| Technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | 1N5767 |
| JESD-30 Code | O-LALF-W2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 250mW |
| Diode Type | PIN - Single |
| Case Connection | ISOLATED |
| Application | ATTENUATOR; SWITCHING |
| Current - Max | 100mA |
| Capacitance @ Vr, F | 0.4pF @ 50V 1MHz |
| Voltage - Peak Reverse (Max) | 100V |
| Breakdown Voltage-Min | 100V |
| Diode Capacitance-Nom | 0.4pF |
| Resistance @ If, F | 2.5Ohm @ 100mA 100MHz |
| Diode Capacitance-Max | 0.4pF |
| Minority Carrier Lifetime-Nom | 1.3 µs |
| Diode Res Test Current | 100mA |
| Diode Res Test Frequency | 100MHz |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
