1N5806C.TR
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | Axial |
| Surface Mount | NO |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 2 |
| Terminal Form | WIRE |
| Base Part Number | 1N5806 |
| JESD-30 Code | E-LALF-W2 |
| Operating Temperature (Max) | 175°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 1μA @ 150V |
| Voltage - Forward (Vf) (Max) @ If | 875mV @ 1A |
| Case Connection | ISOLATED |
| Operating Temperature - Junction | -65°C~175°C |
| Output Current-Max | 2.5A |
| Application | SUPER FAST RECOVERY |
| Voltage - DC Reverse (Vr) (Max) | 150V |
| Current - Average Rectified (Io) | 2.5A |
| Number of Phases | 1 |
| Reverse Recovery Time | 25ns |
| Rep Pk Reverse Voltage-Max | 150V |
| Capacitance @ Vr, F | 25pF @ 5V 1MHz |
| Non-rep Pk Forward Current-Max | 30A |
| Reverse Current-Max | 5μA |
| Reverse Test Voltage | 150V |
See Relate Datesheet
