1N5822 R0G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | DO-201AD, Axial |
| Surface Mount | NO |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| Terminal Form | WIRE |
| JESD-30 Code | O-PALF-W2 |
| Operating Temperature (Max) | 125°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 500μA @ 40V |
| Voltage - Forward (Vf) (Max) @ If | 525mV @ 3A |
| Case Connection | ISOLATED |
| Operating Temperature - Junction | -55°C~125°C |
| Output Current-Max | 3A |
| Application | GENERAL PURPOSE |
| Voltage - DC Reverse (Vr) (Max) | 40V |
| Current - Average Rectified (Io) | 3A |
| Number of Phases | 1 |
| Rep Pk Reverse Voltage-Max | 40V |
| Capacitance @ Vr, F | 200pF @ 4V 1MHz |
| Non-rep Pk Forward Current-Max | 70A |
| Reverse Current-Max | 500μA |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
