Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Lead, Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | A, Axial |
Number of Pins | 2 |
Diode Element Material | SILICON |
Packaging | Bulk |
Published | 1997 |
JESD-609 Code | e0 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -65°C |
Additional Feature | METALLURGICALLY BONDED, HIGH RELIABILITY |
HTS Code | 8541.10.00.80 |
Capacitance | 40pF |
Voltage - Rated DC | 600V |
Technology | AVALANCHE |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 4A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | 1N6628 |
Pin Count | 2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Standard |
Current - Reverse Leakage @ Vr | 2μA @ 600V |
Output Current | 4A |
Voltage - Forward (Vf) (Max) @ If | 1.35V @ 2A |
Case Connection | ISOLATED |
Forward Current | 1.75A |
Operating Temperature - Junction | -65°C~150°C |
Application | ULTRA FAST RECOVERY |
Forward Voltage | 1.5V |
Max Reverse Voltage (DC) | 600V |
Average Rectified Current | 1.75A |
Number of Phases | 1 |
Reverse Recovery Time | 45 ns |
Max Repetitive Reverse Voltage (Vrrm) | 660V |
Peak Non-Repetitive Surge Current | 75A |
Radiation Hardening | Yes |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |