Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Gold |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 0402 (1006 Metric) |
Number of Pins | 2 |
Diode Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2013 |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
HTS Code | 8541.10.00.70 |
Subcategory | Rectifier Diodes |
Power Rating | 350mW |
Max Power Dissipation | 300mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | 1SS361 |
Pin Count | 2 |
Number of Elements | 1 |
Element Configuration | Single |
Speed | Small Signal =< 200mA (Io), Any Speed |
Diode Type | Standard |
Current - Reverse Leakage @ Vr | 500nA @ 80V |
Voltage - Forward (Vf) (Max) @ If | 1.2V @ 100mA |
Forward Current | 300mA |
Operating Temperature - Junction | -55°C~150°C |
Max Surge Current | 2A |
Output Current-Max | 0.1A |
Forward Voltage | 1.2V |
Max Reverse Voltage (DC) | 80V |
Average Rectified Current | 100mA |
Reverse Recovery Time | 4 ns |
Peak Reverse Current | 500nA |
Max Repetitive Reverse Voltage (Vrrm) | 80V |
Capacitance @ Vr, F | 3pF @ 0V 1MHz |
Peak Non-Repetitive Surge Current | 2A |
Recovery Time | 4 ns |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |