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2DB1132Q-13

2DB1132Q-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-2DB1132Q-13
  • Package: TO-243AA
  • Datasheet: PDF
  • Stock: 706
  • Description: 2DB1132Q-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Supplier Device Package SOT-89-3
Weight 51.993025mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1W
Frequency 190MHz
Base Part Number 2DB1132
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 1W
Power - Max 1W
Gain Bandwidth Product 190MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 3V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 32V
Voltage - Collector Emitter Breakdown (Max) 32V
Current - Collector (Ic) (Max) 1A
Collector Emitter Saturation Voltage -125mV
Max Breakdown Voltage 32V
Frequency - Transition 190MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) -5V
Height 1.5mm
Length 4.5mm
Width 2.48mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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