Parameters | |
---|---|
Power Dissipation | 1W |
Case Connection | COLLECTOR |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 120MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 32V |
Max Collector Current | 2A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA 3V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
Collector Emitter Breakdown Voltage | 32V |
Transition Frequency | 120MHz |
Collector Emitter Saturation Voltage | -800mV |
Max Breakdown Voltage | 32V |
Collector Base Voltage (VCBO) | 40V |
Emitter Base Voltage (VEBO) | -5V |
Height | 1.5mm |
Length | 4.5mm |
Width | 2.48mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Number of Pins | 4 |
Weight | 51.993025mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Max Power Dissipation | 1W |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Frequency | 120MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | 2DB1188 |
Pin Count | 4 |
JESD-30 Code | R-PSSO-F3 |
Number of Elements | 1 |
Element Configuration | Single |