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2DB1386R-13

2DB1386R-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-2DB1386R-13
  • Package: TO-243AA
  • Datasheet: PDF
  • Stock: 250
  • Description: 2DB1386R-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 130.492855mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA 2V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 4A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) -6V
Height 1.5mm
Length 4.5mm
Width 2.48mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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