Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~200°C TJ |
Packaging | Tube |
JESD-609 Code | e0 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Lead (Sn/Pb) |
HTS Code | 8541.21.00.95 |
Subcategory | Other Transistors |
Voltage - Rated DC | 75V |
Max Power Dissipation | 800mW |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Current Rating | 500mA |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | 2N16 |
JESD-30 Code | O-MBCY-W3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Gain Bandwidth Product | 80MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 1.5V |
Max Collector Current | 500mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 10V |
Current - Collector Cutoff (Max) | 10nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 15mA, 150mA |
Collector Emitter Breakdown Voltage | 50V |
Transition Frequency | 60MHz |
Collector Base Voltage (VCBO) | 75V |
Emitter Base Voltage (VEBO) | 7V |
hFE Min | 20 |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |