2N2102
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 175°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 120V |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE |
| Reach Compliance Code | not_compliant |
| Current Rating | 1A |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
| Base Part Number | 2N21 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 65V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 2nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 15mA, 150mA |
| Collector Emitter Breakdown Voltage | 65V |
| Transition Frequency | 60MHz |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 10 |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
